DFB50N06 Datasheet | DnI

.. N-Channel MOSFET Features - - - - - RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36n C) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-263...