DFB4N60 Datasheet N-Channel MOSFET

Manufacturer: DnI

DFB4N60 n-channel mosfet by DnI - Datasheet Preview

Datasheet Details

Part number	DFB4N60
Manufacturer	DnI
File Size	721.78 KB
Description	N-Channel MOSFET
Download	DFB4N60 Download (PDF)

General Description

This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

TO-263 (D2-Pak) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.

Overview

www.DataSheet4U.com DFB4N60 N-Channel MOSFET.

Key Features

N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V.
▲.
RDS(ON) = 2.5 ohm ID = 4A 3. Source { General.

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