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DFB4N60 Datasheet Preview

DFB4N60 Datasheet

N-Channel MOSFET

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DFB4N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 22nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 600V
RDS(ON) = 2.5 ohm
ID = 4A
General Description
This N-channel enhancement mode field-effect power transistor
using D& I semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics.
TO-263
(D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4
2.5
16
±30
262
10
4.5
100
0.8
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.25
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Mar, 2006. Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1/7




DnI

DFB4N60 Datasheet Preview

DFB4N60 Datasheet

N-Channel MOSFET

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www.DataSheet4U.com
DFB4N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 2.0A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =4.0A, RG =25
see fig. 13.
(Note 4, 5)
VDS =480V, VGS =10V, ID =4.0A
see fig. 12.
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.68
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
2.0 2.5
V
520 650
135 195
280 400
pF
25 32
54 70
120 157
34 45
22 28
3.2 -
7.8 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =4.0A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=4.0A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 30mH, IAS =4.0A, VDD = 50V, RG = 50, Starting TJ = 25°C
3. ISD 4.0, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
560
1.78
Max.
4.0
16.0
1.4
-
-
Unit.
A
V
ns
uC
2/7


Part Number DFB4N60
Description N-Channel MOSFET
Maker DnI
Total Page 7 Pages
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