DFB50N06 mosfet equivalent, n-channel mosfet.
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RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS =.
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designe.
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