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DFB50N06 - N-Channel MOSFET

Datasheet Summary

Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Features

  • RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General.

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Datasheet preview – DFB50N06

Datasheet Details

Part number DFB50N06
Manufacturer DnI
File Size 636.20 KB
Description N-Channel MOSFET
Datasheet download datasheet DFB50N06 Datasheet
Additional preview pages of the DFB50N06 datasheet.

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www.DataSheet4U.com DFB50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
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