DFB50N06 Datasheet | DnI

Features - - - - - RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36n C) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-263 (D2-Pak) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 60 50 38 200 Units V A A A V m J m J V/ns W W/°C °C °C ±25 642 12 7.0 120 0.8 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA May, 2006, Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 1.25 62.5 Units °C/W °C/W...