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DIM200MHS12-A000
DIM200MHS12-A000
Half Bridge IGBT Module
Replaces June 2002, version DS5535-2.1 DS5535-3.0 March 2003
FEATURES
I I I
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK)
1200V 2.2V 200A 400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I
Inverters Motor Controllers
11(C2) 2(E2) 6(G2) 7(E2) 3(C1)
1(E1C2)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
DIM200MHS12-A000 Datasheet
