STB60D0
Key Features
- 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1μA above 10V * Pb / RoHS Free
- Part: STB60D0
- Description: SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
- Manufacturer: EIC Semiconductor
- Size: 162.86 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| STB60N06-14 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60N03L-10 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB6000 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NH02L | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NF06 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NF03L | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NE06L-16 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NE06-16 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60NE03L-12 | STMicroelectronics | N-CHANNEL Power MOSFET |
| STB60L60 | SamHop | N-Channel Logic Level Enhancement Mode Field Effect Transistor |