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ECP200 Datasheet

Manufacturer: EIC Semiconductor
ECP200 datasheet preview

Datasheet Details

Part number ECP200
Datasheet ECP200_EICdiscreteSemiconductors.pdf
File Size 86.83 KB
Manufacturer EIC Semiconductor
Description 2.0 WATT POWER AMPLIFIER
ECP200 page 2 ECP200 page 3

ECP200 Overview

The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output.

ECP200 Key Features

  • 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Relia

ECP200 Applications

  • 3dB Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel Bandwidth = 3.84MHz. Frequency offset: +/- 5MHz

ECP200D from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
WJ Communication Logo ECP200D High Linearity InGaP HBT Amplifier WJ Communication
WJ Communication Logo ECP200G High Linearity InGaP HBT Amplifier WJ Communication
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