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ECP200 Datasheet, EIC discrete Semiconductors

ECP200 Datasheet, EIC discrete Semiconductors

ECP200

datasheet Download (Size : 86.83KB)

ECP200 Datasheet

ECP200 amplifier equivalent, 2.0 watt power amplifier.

ECP200

datasheet Download (Size : 86.83KB)

ECP200 Datasheet

Features and benefits

1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications.

Application

Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16.

Description

The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and.

Image gallery

ECP200 Page 1 ECP200 Page 2 ECP200 Page 3

TAGS

ECP200
2.0
WATT
POWER
AMPLIFIER
EIC discrete Semiconductors

Manufacturer


EIC discrete Semiconductors

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