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ECP200 - 2.0 WATT POWER AMPLIFIER

Datasheet Summary

Description

The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency.

This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process.

The devices have a 50 Ohms input impedance and pre-matched output.

Features

  • 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation.

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Datasheet preview – ECP200

Datasheet Details

Part number ECP200
Manufacturer EIC discrete Semiconductors
File Size 86.83 KB
Description 2.0 WATT POWER AMPLIFIER
Datasheet download datasheet ECP200 Datasheet
Additional preview pages of the ECP200 datasheet.

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    Full PDF Text Transcription

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    PRELIMINARY DATA SHEET ECP200 2.0 WATT POWER AMPLIFIER Product Features 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm) SOIC-8 Product Description The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. It is optimized for multicarriers applications and allows customers to use class A or class AB operations.
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