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EPC

EPC1005 Datasheet Preview

EPC1005 Datasheet

Enhancement Mode Power Transistor

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DATASHEET
EPC1005 – Enhancement Mode Power Transistor
VDSS , 60 V
RDS(ON) , 7 mW
ID , 25 A
EPC1005
EFFICIENT POWER CONVERSION
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
VDS Drain-to-Source Voltage
60
ID
Continuous (TA = 25˚C, θJA= 20)
Pulsed (25˚C, Tpulse = 300 µs)
25
100
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
6
-5
TJ Operating Temperature
TSTG Storage Temperature
-40 to 125
-40 to 150
V
A
V
˚C
PARAMETER
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
VGS(th)
RDS(ON)
Gate Threshold Voltage
Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 300 µA
VDS = 48 V, VGS = 0 V
VGS = 5 V
VGS = -5 V
VDS = VGS, ID = 5 mA
VGS = 5 V, ID = 25 A
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
QG Total Gate Charge (VGS = 5 V)
QGD Gate to Drain Charge
QGS Gate to Source Charge
QOSS Output Charge
QRR Source-Drain Recovery Charge
VDS = 30 V, VGS = 0 V
VDS = 30 V, ID = 25 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
MIN
60
0.7
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
EPC Power Transistors are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP MAX UNIT
V
50 250 µA
1
0.2
5
1
mA
1.4 2.5 V
5.6 7 mΩ
790
480 pF
43
10
2.5
3 nC
23
0
1.8
1.75
V
| PAGE 1




EPC

EPC1005 Datasheet Preview

EPC1005 Datasheet

Enhancement Mode Power Transistor

No Preview Available !

DATASHEET
EPC1005
Figure 1: Typical Output Characteristics
100
90
VGS = 5
VGS = 4
80 VGS = 3
VGS = 2
70
60
50
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VDS– Drain to Source Voltage (V)
1.8
2
Figure 3: RDS(ON) vs VG for Various Current
16
14
12
10
8
6
4
ID = 10 A
ID = 20 A
2
ID= 50 A
ID= 100A
02.5 3 3.5 4 4.5
VGS – Gate to Source Voltage (V)
5
5.5
Figure 2: Transfer Characteristics
80
70
25˚C
125˚C
60 VDS = 3V
50
40
30
20
10
0 .5 1 1.5 2 2.5 3 3.5 4 4.5
VGS – Gate to Source Voltage (V)
Figure 4: RDS(ON) vs VG for Various Temperature
20
25˚C
125˚C
ID = 25 A
15
10
5
02.5 3 3.5 4 4.5 5 5.5
VGS – Gate to Source Voltage (V)
Figure 5: Capacitance
1.4
1.2
1
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
0.8
0.6
0.4
0.2
0 0 10 20 30 40 50 60
VDS – Drain to Source Voltage (V)
Figure 6: Gate Charge
5
4.5
ID = 25 A
VDS = 30 V
4
3.5
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
QG – Gate Charge (nC)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
| PAGE 2


Part Number EPC1005
Description Enhancement Mode Power Transistor
Maker EPC
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EPC1005 Datasheet PDF






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