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eGaN® FET DATASHEET
EPC2010 – Enhancement Mode Power Transistor
VDSS , 200 V RDS(ON) , 25 mW ID , 12 A
NEW PRODUCT
EPC2010
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
EPC2010 Datasheet
