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EPC

EPC2010 Datasheet Preview

EPC2010 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2010 – Enhancement Mode Power Transistor
VDSS , 200 V
RDS(ON) , 25 mW
ID , 12 A
NEW PRODUCT
EPC2010
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
VDS Drain-to-Source Voltage
200
V
ID
Continuous (TA =25˚C, θJA = 17)
Pulsed (25˚C, Tpulse = 300 µs)
12
A
60
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage
6
V
-5
TJ Operating Temperature
TSTG Storage Temperature
-40 to 125
˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 200 µA
200
IDSS
Drain Source Leakage
VDS = 160 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V
VGS = -5 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 3 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 6 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
PARAMETER
ThTeErSmT aCOl NCDhIaTrIOacNtSeristics
MIN
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CRISSθJC
TheIrnmpaultRCeaspisatcaintacne,cJeunction to Case
CORSθSJB
ThOerumtpaul Rt eCsaisptaacnitcaen, cJuenction to Board VDS = 100 V, VGS = 0 V
CRRSθSJA
ReTvheersrme TarlaRnessfiesrtaCnacpea,cJiutanncctieon to Ambient (Note 1)
Q Total Gate Charge (V = 5 V) Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See hGttp://epc-co.com/epc/documents/product-trainGinSg/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
QGD
Gate to Drain Charge
VDS = 100 V, ID = 12 A
EPC – EQFFGISCIENT POWER CGOaNteVEtoRSSIoOuNrcCeOCRhPaOrgReATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
QOSS
Output Charge
VDS = 100 V, VGS = 0 V
EPC2010 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP
MAX
UNIT
V
50
150
µA
1
3
mA
0.2
1
1.4
2.5
V
18
25
mΩ
1.8
V
1.8
TYP
TYP
4802.4
270 16
9.2 56
5
1.7
1.3
40
MAX
UNIT
540 ˚C/W
350 ˚C/W pF
12 ˚C/W
7.5
2.6
2
| nPCAGE 1
50




EPC

EPC2010 Datasheet Preview

EPC2010 Datasheet

Power Transistor

No Preview Available !

Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
eGaN®VSFDET DATASSHouErcEeT-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
1.8
1.8
EPCV2010
PARAMETER
TEST CONDITIONS
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
COSS
Output Capacitance
VDS = 100 V, VGS = 0 V
CRSS
Reverse Transfer Capacitance
QG
Total Gate Charge (VGS = 5 V)
QGD
Gate to Drain Charge
VDS = 100 V, ID = 12 A
QGS
Gate to Source Charge
QOSS
Output Charge
VDS = 100 V, VGS = 0 V
QRR
Source-Drain Recovery Charge
All measurements were done with substrate shorted to source.
MIN
TYP
MAX
UNIT
480
540
270
350
pF
9.2
12
5
7.5
1.7
2.6
1.3
2
nC
40
50
0
Figure 1: Typical Output Characteristics
60
VGS = 5
50
VGS = 4
VGS = 3
VGS = 2
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
VDS – Drain to Source Voltage (V)
Figure 2: Transfer Characteristics
60
25˚C
50
125˚C
VDS = 3 V
40
30
20
10
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS – Gate to Source Voltage (V)
Figure 3: RDS(ON) vs VG for Various Current
60
50
40
30
20
ID = 10 A
ID = 20 A
10
ID = 40 A
ID = 60 A
0
2
2.5
3
3.5
4
4.5
5
5.5
VGS – Gate to Source Voltage (V)
Figure 4: RDS(ON) vs VG for Various Temperature
60
25˚C
50
125˚C
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
5.5
VGS – Gate to Source Voltage (V)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 2



Part Number EPC2010
Description Power Transistor
Maker EPC
Total Page 3 Pages
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EPC2010 Datasheet PDF





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