EPC2010 Description
eGaN® FET DATASHEET EPC2010 Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON),...