EPC EPC2012C
Power Transistor
| Part No. | EPC2012C |
|---|---|
| Datasheet | EPC2012C Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25˚C, RθJA = 26°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 5 A 22 6 V -4 -40 to 150 °C -40 to 150 EPC2012C eGaN® FETs are supplied only in passivated die form with solder barsAPPLICATIONS
● High Frequency DC-DC Conversion● Class D Audio
● Wireless Power Transfer Benefits
● Ultra High Efficiency
● Ultra Low RDS(on)
● Ultra Low QG
● Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 4.2 RθJB Thermal Resistance, Junction-to-Board 12.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 85 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS MIN TYP MAX BVDSS IDS...
