EPC2012C Datasheet | EPC

e Ga N® FET DATASHEET - Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A EFFICIENT POWER CONVERSION Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) Continuous (TA = 25˚C, RθJA = 26°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 5 A 6 V -4 -40 to 150 °C -40 to 150 EPC2012C e Ga N® FETs are supplied only in passivated die form with solder bars Applications - High Frequency DC-DC Conversion - Class D Audio - Wireless Power Transfer Benefits - Ultra High Efficiency - Ultra Low RDS(on) - Ultra Low QG - Ultra Small Footprint Thermal Characteristics PARAMETER UNIT RθJC Thermal Resistance, Junction-to-Case RθJB Thermal Resistance, Junction-to-Board...