M12L64164A-5TG2M Key Features
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for m
- 15.6 μ s refresh interval
- Part: M12L64164A-5TG2M
- Manufacturer: Elite Semiconductor Microelectronics Technology
- Size: 1.22 MB
Related Elite Semiconductor Microelectronics Technology Datasheets
| Part Number | Description |
|---|---|
| M12L64164A-5TG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5TG2Y | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5TIAG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5TIG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-5BG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
M12L64164A-5TG2M Description
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls.