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100N10 Datasheet Preview

100N10 Datasheet

N-Channel PowerTrench MOSFET

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100N10
100N10
N-Channel PowerTrench® MOSFET
100V, 75A, 10m
Features
• RDS(on) = 8.2m( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handing capability
• RoHS compliant
Applications
DC to DC converters / Synchronous Rectification
Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
D
G DS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 75oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
(Note 1)
(Note 2)
(Note 3)
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθCS
Thermal Resistance, Case to Sink Typ.
RθJA
Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
Ratings
100
±20
75
300
365
4.8
208
1.4
-55 to +175
300
Ratings
0.72
0.5
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
1/5




ETC

100N10 Datasheet Preview

100N10 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

100N10
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP100N10
Device
FDP100N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min. Typ. Max. Units
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 150oC
VGS = ±20V, VDS = 0V
100
-
-
-
-
- -V
0.1 - V/oC
-1
µA
- 500
- ±100 nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
2.5 - 4.5 V
VGS = 10V, ID = 75A
- 8.2 10 m
VDS = 10V, ID = 37.5A
(Note 4)
-
110
-
S
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 50V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
5500
530
220
76
30
20
7300
710
325
100
-
-
pF
pF
pF
nC
nC
nC
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 25
(Note 4, 5)
-
-
-
-
70 150 ns
265 540 ns
125 260 ns
115 240 ns
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2:
3:
L=
ISD
0.13mH, IAS = 75A, VDD = 25V, RG =
75A, di/dt 200A/µs, VDD BVDSS,
25, Starting
Starting TJ =
2T5Jo=C25oC
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
- 75 A
- 300 A
- 1.25 V
71 - ns
164 - nC
2/5


Part Number 100N10
Description N-Channel PowerTrench MOSFET
Maker ETC
Total Page 5 Pages
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