100N10 Datasheet | Unknown Manufacturer

N-Channel Power Trench® MOSFET 100V, 75A, 10mΩ Features - RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(on) - High power and current handing capability - Ro HS pliant Applications DC to DC converters / Synchronous Rectification Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G DS TO-220 MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS VGSS ID IDM EAS dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 75o C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C TJ, TSTG TL Operating and Storage Temperature...