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BSS67R Datasheet

SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

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SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 1995 7
BSS66
BSS67
PARTMARKING DETAILS —
BSS66 - M6
BSS67 - M7
BSS66R - M8
BSS67R - M9
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
60
40
6
200
100
50
330
-55 to +150
V
V
V
mA
mA
mA
mW
°C
UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
Collector-Base Breakdown Voltage
V(BR)CBO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector- Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Static Forward Current
Transfer Ratio
BSS66
hFE
Static Forward Current BSS67
Transfer Ratio
hFE
Transition Frequency
BSS66
BSS67
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
fT
Cobo
Cibo
N
40
60
6
0.65
20
35
50
30
15
40
70
100
60
30
250
300
Typ. 6
50
0.20
0.30
0.85
0.95
150
300
4
8
V
V
V
nA
V
V
V
V
MHz
MHz
pF
pF
dB
Switching times: Delay; Rise
Storage Time
Fall Time
td; tf
ts
tf
35 ns
200 ns
50 ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
IC=1mA
IC=10µA
IE=10µA
VCES=30V
IC=10mA, IB=1mA
IC=50mA, IB=5mA*
IC=10mA, IB=1mA
IC=50mA, IB=5mA*
IC=100µA,
IC=1mA,
IC=10mA, VCE=1V
IC=50mA*,
IC=100mA*,
IC=100µA,
IC=1mA,
IC=10mA, VCE=1V
IC=50mA*,
IC=100mA*,
IC=10mA, VCE=20V
f=100MHz
VCB=5V, f=100kHz
VEB=0.5V, f=100kHz
IC=100µA, VCE=5V
RS=1k, f=10Hz to15.7 kHz
VCC=3V, IC=10mA
IB1= IB2 =1mA
PAGE NUMBER


Part Number BSS67R
Description SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
Maker ETC
Total Page 1 Pages
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