FLU35ZM Datasheet | Unknown Manufacturer

FEATURES - High Output Power: P1d B=35.5d Bm(typ.) - High Gain: G1d B=11.5d B(typ.) - Low Cost Plastic(SMT) Package - Tape and Reel Available L-Band Medium & High Power Ga As FET DESCRIPTION The FLU35ZM is a Ga As FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 175 Unit V V W o o REMENDED OPERATING CONDITION(Case Temperature Tc=25o C) Symbol VDS Tch Igsf Igsr Rg Condition Unit V o ≤10 ≤ 145 ≤19.4 ≥-2.0 C m A m A Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Thermal Resistance Symbol IDSS gm Vp VGSO P1d B G1d B Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=800m A VDS=5V, IDS=60m A IGS=-60u A VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.) Min. -1.0 -5 34.5 10.5 Limit Typ. 1200 600 -2.0 35.5 11.5 5 Max. 1800 -3.5 6 o Unit m A m S V V d Bm d B C /W Channel to Case G.C.P.:Gain pression Point CASE STYLE: ZM Note1: Product supplied to this specification are 100% DC performance tested. Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅲ 2000 V～ Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kΩ) Edition 1.2 Jan 2004 L-Band Medium & High Power Ga As FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER f=2.0GHz VDS=10V...