l-band medium & high power gaas fet.
High Output Power: P1dB=35.5dBm(typ.) High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXI.
The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stri.
Image gallery
TAGS