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F59L4G81A Datasheet 4 Gbit (512M x 8) 3.3V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

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General Description

The device is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Overview

ESMT Flash.

Key Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V).
  • Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes.
  • Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Program time: 350us (Typ. ) - Block Erase time: 3.5ms (Typ. ).
  • Command/Address/Data Mu.

📁 Similar Datasheet

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More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L1G81A 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory