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F59L4G81A Key Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V)
  • Organization
  • Memory Cell Array: (512M + 16M) x 8bit
  • Data Register: (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program: (2K + 64) bytes
  • Block Erase: (128K + 4K) bytes
  • Page Read Operation
  • Page Size: (2K + 64) bytes
  • Random Read: 25us (Max.)

Other F59L4G81A Datasheets

Manufacturer Part Number Description
ESMT Logo Elite Semiconductor Microelectronics Technology F59L4G81CA-25BG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology F59L4G81KA 4-Gbit 3.3V NAND Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology F59L4G81XB 3.3V NAND Flash Memory

F59L4G81A Description

The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.