M24L16161DA datasheet, ram equivalent, Elite Semiconductor Memory Technology

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M24L16161DA Features and benefits

* Wide voltage range: 2.2V
–3.6V
* Access Time: 70 ns
* Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active curr.

M24L16161DA Application

such as cellular telephones. The device can be put into standby mode when deselected ( CE1 HIGH or CE2 LOW or both BHE a.

M24L16161DA Description

of read and write modes. Functional Description[1] The M24L16161DA is a high-performance CMOS Pseudo Static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide .

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