16-Mbit Datasheet | Specifications & PDF Download

HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general pu

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TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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IC41C44002A/IC41C44002AS(L) IC41LV44002A/IC41LV44002AS(L) Document Title 4Mx4 bit Dynamic RAM with EDO Page Mode Revision History Revision No 0A His

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CY7C1316CV18, CY7C1916CV18 CY7C1318CV18, CY7C1320CV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description The CY

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4 Mbit (x16) Multi-Purpose Flash Plus SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C Data Sheet SST39VF401C / SST39VF402C / SST39LF401C / SST3

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www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description The CY

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K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC

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SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial

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A Microchip Technology Company 8 Mbit (x16) Multi-Purpose Flash SST39WF800B Data Sheet The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF)

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SST39VF1601C/SST39VF1602C 16 Mbit (x16) Multi-Purpose Flash Plus The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose Flash Plus (MP

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CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■

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D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne

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CY62156ESL MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static RAM Features ■ High Speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and

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CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co

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CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Co

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CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and

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CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and

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E n n n n n 28F016XS 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY n n n n n n Backwards-Compatible with 28F008SA Command-Set 2 µA Typic

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