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M24L816512SA - 8-Mbit (512K x 16) Pseudo Static RAM

Description

of read and write modes.

The M24L816512SA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 16 bits that supports an asynchronous memory interface.

Features

  • ‧Advanced low-power architecture.
  • High speed: 55 ns, 70 ns.
  • Wide voltage range: 2.7V to 3.6V.
  • Typical active current: 2 mA @ f = 1 MHz.
  • Typical active current: 11 mA @ f = fMAX.
  • Low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com M24L816512SA 8-Mbit (512K x 16) Pseudo Static RAM Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is accomplished by t.

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Datasheet Details

Part number M24L816512SA
Manufacturer Elite Semiconductor Memory Technology
File Size 360.74 KB
Description 8-Mbit (512K x 16) Pseudo Static RAM
Datasheet download datasheet M24L816512SA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f = 1 MHz • Typical active current: 11 mA @ f = fMAX • Low standby power • Automatic power-down when deselected www.DataSheet4U.com M24L816512SA 8-Mbit (512K x 16) Pseudo Static RAM Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable( CE LOW) and Write Enable ( WE ) input LOW. If Byte Low Enable ( BLE ) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins(A0 through A18).
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