M24L816512SA Datasheet | Elite Semiconductor Memory Technology

ESMT PSRAM Features ‧Advanced low-power architecture - High speed: 55 ns, 70 ns - Wide voltage range: 2.7V to 3.6V - Typical active current: 2 mA @ f = 1 MHz - Typical active current: 11 mA @ f = fMAX - Low standby power - Automatic power-down when deselected .. M24L816512SA 8-Mbit (512K x 16) Pseudo Static RAM Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). Writing to the device is acplished by taking Chip Enable( CE LOW) and Write Enable ( WE ) input LOW. If Byte Low Enable ( BLE ) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins(A0 through A18). If Byte...