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EDS1216AABH - (EDS1216AABH / EDS1216CABH) 128M bits SDRAM

Description

The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks.

All inputs and outputs are synchronized with the positive edge of the clock.

Supply voltages are 3.3V (EDS1216AABH) and 2.5V (EDS1216CABH).

Features

  • 3.3V and 2.5V power supply Clock frequency: 133MHz (max. ) Single pulsed /RAS ×16 organization 4 banks can operate simultaneously and independently.
  • Burst read/write operation and burst read/single write operation capability.
  • Programmable burst length (BL): 1, 2, 4, 8, full page.
  • 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8, full page)  Interleave (BL = 1, 2, 4, 8).
  • Programmable /CAS latency (CL.

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Datasheet Details

Part number EDS1216AABH
Manufacturer Elpida Memory
File Size 1.08 MB
Description (EDS1216AABH / EDS1216CABH) 128M bits SDRAM
Datasheet download datasheet EDS1216AABH Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET 128M bits SDRAM EDS1216AABH, EDS1216CABH (8M words × 16 bits) Description The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V (EDS1216AABH) and 2.5V (EDS1216CABH). They are packaged in 54-ball FBGA. Pin Configurations /xxx indicate active low signal. 54-ball FBGA 1 A VSS DQ15 VSSQ VDDQ DQ0 VDD 2 3 4 5 6 7 8 9 B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 Features • • • • • 3.3V and 2.5V power supply Clock frequency: 133MHz (max.
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