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HB56UW873E-F - 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit

Features

  • E0102H10 (1st edition) (Previous ADE-203-1125B (Z)) Jan. 31, 2001 The HB 56UW 873E belongs to 8 B yte DI MM (D ual In- line Memory Module) fa mily, and has bee n deve loped as an optimiz ed main memory solution for 4 and 8 B yte proc essor applica tions. The HB 56UW 873E is a 8M × 72 dynamic RAM module, mounted 9 pieces of 64-Mbit DRAM (HM5165805) sealed in TSOP package and 2 piec es of 16-bit line drive r sea led in TS SOP pac kage . The HB 56UW 873E off ers Extende d Da ta Out (ED O) Page Mo.

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Datasheet Details

Part number HB56UW873E-F
Manufacturer Elpida Memory
File Size 255.16 KB
Description 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit
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HB56UW873E-F 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components) • 168-pin socket type package (Dual lead out)  Lead pitch: 1.27 mm www.DataSheet4U.com • Single 3.3 V supply: 3.3V ± 0.3V • High speed  Access time: tRAC = 50/60 ns (max)  Access time: tCAC = 18/20 ns (max) • Low power dissipation  Active mode: 4.41 W/3.76 W (max)  Standby mode (TTL): 100.8 mW (max) • Buffered input except RAS and DQ • 4 byte interleave enabled, dual address input (A0/B0) • EDO page mode capability • 4,096 refresh cycle: 64 ms EO Description Features E0102H10 (1st edition) (Previous ADE-203-1125B (Z)) Jan.
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