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HB56UW873E-F
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
• 168-pin socket type package (Dual lead out) Lead pitch: 1.27 mm www.DataSheet4U.com • Single 3.3 V supply: 3.3V ± 0.3V • High speed Access time: tRAC = 50/60 ns (max) Access time: tCAC = 18/20 ns (max) • Low power dissipation Active mode: 4.41 W/3.76 W (max) Standby mode (TTL): 100.8 mW (max) • Buffered input except RAS and DQ • 4 byte interleave enabled, dual address input (A0/B0) • EDO page mode capability • 4,096 refresh cycle: 64 ms
EO
Description Features
E0102H10 (1st edition) (Previous ADE-203-1125B (Z)) Jan.