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Ericsson

PTB20170 Datasheet Preview

PTB20170 Datasheet

30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

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e
PTB 20170
30 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20170 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 30 Watts, 1.8–2.0 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
35
30
25
20
15 VCC = 26 V
10 ICQ = 100 mA
5 f = 2.0 GHz
0
01 2345 6
Input Power (Watts)
7
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20170LOT CODE
Package 20209
Symbol
VCER
VCES
VEBO
IC
PD
TSTG
RθJC
Value
55
55
4.0
6.7
123
0.7
–40 to +150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20170 Datasheet Preview

PTB20170 Datasheet

30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20170
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IC = 50 mA, RBE = 27
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 mA
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 30 W(PEP), ICQ = 100 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12 70
VCC= 26 V
11 ICQ = 100 mA
60
Efficiency (%)
10 50
9
Output Power (W)
40
8
Gain (dB)
30
7
1750
1800
1850 1900 1950
Frequency (MHz)
2000
20
2050
e
Symbol
V(BR)CER
V(BR)CES
V(BR)EBO
hFE
Min
55
55
4
20
Typ
5
50
Max
120
Units
Volts
Volts
Volts
Symbol Min
Gpe 7.0
ηC 38
Ψ
Typ Max Units
8.5 —
46 —
dB
%
— 5:1
Broadband Test Fixture Performance
10 60
9 Gain (dB)
50
Efficiency (%) 40
8 VCC = 26 V
7 ICQ = 100 mA
- 350
POUT = 30 W
-1250
6 -2150
Return Loss (dB)
5
1900
1925
1950
1975
Frequency (MHz)
-305
2000
5/18/98
2


Part Number PTB20170
Description 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Maker Ericsson
Total Page 5 Pages
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