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PTB20179 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

PTB20179 Description

e PTB 20179 0.4 Watt, 1.8 *2.0 GHz Cellular Radio RF Power Transistor .
The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.

PTB20179 Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 0.4 Watt, 1.8
* 2.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in T

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Datasheet Details

Part number
PTB20179
Manufacturer
Ericsson
File Size
201.34 KB
Datasheet
PTB20179_Ericsson.pdf
Description
0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

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0.4 Watt 1.8-2.0 GHz Cellular Radio Power Transistor Ericsson
Ericsson PTB20179-like datasheet