PTB23003X Datasheet - NXP

PTB23003X NPN microwave power transistor

olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Marking code: 2303X. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb =.

PTB23003X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Multicell geometry gives good balance of dissipated power and low thermal resistance

* Localized thic

PTB23003X_PhilipsSemiconductors.pdf