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PTB23003X NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997.
olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package.

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Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Multicell geometry gives good balance of dissipated power and low thermal resistance
* Localized thic

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