PTB32001X - NPN microwave power transistors

NXP

PTB32001X Datasheet Preview — Preview of PTB32001X PDF

Datasheet Details

Part number	PTB32001X
Manufacturer	NXP ↗
File Size	66.25 KB
Description	NPN microwave power transistors
Datasheet	PTB32001X_PhilipsSemiconductors.pdf

PTB32001X Product details

Description

olumns PTB32001X; PTB32003X; PTB32005X PINNING - SOT440A PIN 1 2 3 collector emitter base connected to ﬂange DESCRIPTION 1 c b NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.Top view 3 2 MAM131 e MARKING TYPE NUMBER PTB32001X PTB32003X PTB32005X MARKING CODE 3201X 3203X 3205X Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circui

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

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Other Datasheets by NXP

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Published: Apr 16, 2005 |