Datasheet Details
Part number:
PTB23002U
Manufacturer:
File Size:
73.53 KB
Description:
NPN microwave power transistor
Features
* Very high power gain
* Internal input prematching network
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
PTB23002U_PhilipsSemiconductors.pdf
PTB23002U, NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view MAM131 PTB23002U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.
MODE OF OPE
PTB23002U Distributor
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