PTB23002U Datasheet - NXP

PTB23002U NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 3 2 Top view MAM131 PTB23002U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer. MODE OF OPE.

PTB23002U Features

* Very high power gain

* Internal input prematching network

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure

* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life

PTB23002U_PhilipsSemiconductors.pdf