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PTB23006U - Microwave power transistor

PTB23006U Description

DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary speciļ¬cation Supersedes data of December 1994 1997 Feb 19 Phili.
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

PTB23006U Features

* Very high power gain
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
* Multicell geometry improves power sha

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