PTB23006U Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary speciﬁcation Supersedes data of December 1994 1997 Feb 19 Phili.
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

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Datasheet Specifications

Part number: PTB23006U
Manufacturer: NXP ↗
File Size: 88.57 KB
Datasheet: PTB23006U_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Features

* Very high power gain
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
* Multicell geometry improves power sha

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