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PTB23006U - Microwave power transistor

PTB23006U Description

DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Phili.
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

PTB23006U Features

* Very high power gain
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
* Multicell geometry improves power sha

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