* Very high power gain
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure
* Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
* Multicell geometry improves power sha
PTB23006U Datasheet (88.57 KB)
PTB23006U
88.57 KB
Microwave power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23006U Microwave power transistor
Preliminary specification Supersedes data of December 1994 1997 Feb 19
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