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PTB20006 - 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

PTB20006 Description

e PTB 20006 4 Watts, 860 *900 MHz Cellular Radio RF Power Transistor .
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band.

PTB20006 Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 4 Watts, 860
* 900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivate

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Datasheet Details

Part number
PTB20006
Manufacturer
Ericsson
File Size
44.98 KB
Datasheet
PTB20006_Ericsson.pdf
Description
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

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Watts 860-900 MHz Cellular Radio Power Transistor Ericsson
Ericsson PTB20006-like datasheet