* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Multicell geometry gives good balance of dissipated power and low thermal resistance
* Localized thic
PTB23001X Datasheet (99.58 KB)
PTB23001X
99.58 KB
Npn microwave power transistors.
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors
Product specification Supersedes data of November .
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