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PTB23001X - NPN microwave power transistors

PTB23001X Description

DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product speciļ¬cation Supersedes data of November .
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

PTB23001X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Multicell geometry gives good balance of dissipated power and low thermal resistance
* Localized thic

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NPN microwave power transistors NXP
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