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PTB20170 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

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Description

e PTB 20170 30 Watts, 1.8 *2.0 GHz Cellular Radio RF Power Transistor .
The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.

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Datasheet Specifications

Part number
PTB20170
Manufacturer
Ericsson
File Size
261.38 KB
Datasheet
PTB20170_Ericsson.pdf
Description
30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 30 Watts, 1.8
* 2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Pow

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