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PTB20111 85 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

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Description

e PTB 20111 85 Watts, 860 *900 MHz Cellular Radio RF Power Transistor .
The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz.

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Datasheet Specifications

Part number
PTB20111
Manufacturer
Ericsson
File Size
47.29 KB
Datasheet
PTB20111_Ericsson.pdf
Description
85 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 25 Volt, 860
* 900 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PE

PTB20111 Distributors

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Watts 860-900 MHz Cellular Radio Power Transistor Ericsson
Ericsson PTB20111-like datasheet