PTB20174
Description
The 20174 is an NPN, mon emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Class AB Characteristics Specified 26 Volts, 1490 MHz
- Output Power = 90 Watts
- IMD at 90 Watts = -28 d Bc max.
- Gain at 90 Watts = 7.5 d B min. Gold Metallization Silicon Nitride Passivated
Typical Output Power and Efficiency vs. Input Power
120 90
VCC = 26 V
100 80 60 40 20 0 0 5 10 15 20
Output Power (Watts)
ICQ = 250 m A Total f = 1490 MHz
80 70 60 50 40 30
Efficiency (%)
201 74
LOT COD E
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage (collector shorted) Collector-Base Voltage (emitter open) Emitter-Base Voltage (collector open) Collector Current (continuous)...
