PTF10065
PTF10065 is 30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor manufactured by Ericsson.
Description
The PTF 10065 is a 30- watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 d B gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
- - INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 d B Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
- -
- -
Output Power and Efficiency vs. Input Power
40 Output Power 80 70 60 Efficiency 20
Output Power (Watts)
Efficiency
50 40 e
065 123 456 992 1A 10
VDD = 28 V
30 20 10 0
IDQ = 380 m A f = 1.99 GHz
0 1 2 3
Input Power (Watts)
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 3 W, IDQ = 380 m A, f = 1.93, 1.99 GHz) ACPR (40 Walsh Codes) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 m A, f = 1.99 GHz) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 m A, f = 1.99 GHz) Gain Flatness (VDD = 28 V, POUT = 3 W, IDQ = 380 m A, f = 1.930- 1.990 GHz) Drain Efficiency (VDD = 28 V, POUT = 3 W, IDQ = 380 m A, f = 1.99 GHz) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps ±885 KHz ACPR ±1.98 MHz ACPR GDf h D
Min
- - 50
- 62
- 9
Typ
- -
- -
Max
- -
- 0.7
- Units d B d Bc d Bc d B %
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