EM6A8160 - 4M x 16 DDR Synchronous DRAM

Etron Technology

Key Features

Fast clock rate: 200/250 MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 1M x 16-bit for each bank.
Programmable Mode and Extended Mode Registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte writes mask control.
DM Write Latency = 0.

EM6A8160 4m x 16 ddr synchronous dram by Etron Technology - Datasheet Preview

Datasheet Details

Part number	EM6A8160
Manufacturer	Etron Technology
File Size	463.26 KB
Description	4M x 16 DDR Synchronous DRAM
Datasheet	EM6A8160 Datasheet

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EM6A8160TSD	4M x 16 bit DDR Synchronous DRAM
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EtronTech EM6A8160 4M x 16 DDR Synchronous DRAM (SDRAM) Preliminary (Rev. 1.1, Oct. /2015) Features • Fast clock rate: 200/250 MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 1M x 16-bit for each bank • Programmable Mode and Extended Mode Registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte writes mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 4096 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V ± 0.2V • Operating temperature: TA = 0~70°C • Interface: SSTL_2 I/O Interface • Package: 66 Pin TSOP II, 0.