FLL410IK-3C Key Features
- 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS
- Part: FLL410IK-3C
- Manufacturer: Eudyna Devices
- Size: 268.41 KB
Related Eudyna Devices Datasheets
| Part Number | Description |
|---|---|
| FLL400IK-2 | High Voltage - High Power GaAs FET |
| FLL400IK-2C | High Voltage - High Power GaAs FET |
| FLL400IP-2 | L-Band Medium & High Power GaAs FET |
| FLL400IP-3 | L-Band Medium & High Power GaAs FET |
| FLL107ME | L-BAND MEDIUM & HIGH POWER GAAS FET |
FLL410IK-3C Description
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.