Datasheet4U Logo Datasheet4U.com

FLL410IK-3C - L-Band High Power GaAs FET

Description

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5

2.7 GHz band amplifiers.

This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

Features

  • High Output Power: Pout=46.0dBm(Typ. ) High Gain: GL=13.0dB(Typ. ) High PAE: ηadd=52%(Typ. ) Broad Band: 2.5~2.7GHz Hermetically Sealed Package.

📥 Download Datasheet

Datasheet preview – FLL410IK-3C

Datasheet Details

Part number FLL410IK-3C
Manufacturer Eudyna Devices
File Size 268.41 KB
Description L-Band High Power GaAs FET
Datasheet download datasheet FLL410IK-3C Datasheet
Additional preview pages of the FLL410IK-3C datasheet.

📁 Similar Datasheet

  • FLL410IK-4C - L-Band High Power GaAs FET (Fujitsu)
  • FLL100 - Capacitor (FAAM)
  • FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
  • FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
  • FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity (FAAM)
  • FLL300IL-1 - L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
  • FLL300IL-2 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
  • FLL300IL-3 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
  • FLL300IP-4 - L-band Medium & High Power GAAS Fets (Fujitsu Microelectronics)
  • FLL351ME - L-band medium & high power gaas FTEs (Fujitsu Media Devices)
Other Datasheets by Eudyna Devices
  • FLL400IK-2 - High Voltage - High Power GaAs FET
  • FLL400IK-2C - High Voltage - High Power GaAs FET
  • FLL400IP-2 - L-Band Medium & High Power GaAs FET
  • FLL400IP-3 - L-Band Medium & High Power GaAs FET
  • FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
  • FLL120MK - L-Band Medium & High Power GaAs FET
  • FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
  • FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET

Full PDF Text Transcription

Click to expand full text
L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: ηadd=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FLL410IK-3C www.DataSheet4U.
Published: |