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FLL400IK-2C - High Voltage - High Power GaAs FET

Description

The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • E High Output Power: P1dB=46.0dBm(Typ. ).
  • E High Gain: G1dB=13.0dB(Typ. ).
  • E High PAE: ηadd=45%(Typ. ).
  • E Broad Band: 2.11~2.17GHz.
  • E Hermetically Sealed Package.

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Datasheet preview – FLL400IK-2C

Datasheet Details

Part number FLL400IK-2C
Manufacturer Eudyna Devices
File Size 81.07 KB
Description High Voltage - High Power GaAs FET
Datasheet download datasheet FLL400IK-2C Datasheet
Additional preview pages of the FLL400IK-2C datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com FLL400IK-2C High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.0dBm(Typ.) •E High Gain: G1dB=13.0dB(Typ.) •E High PAE: ηadd=45%(Typ.) •E Broad Band: 2.11~2.17GHz •E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
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