FLL400IK-2C Datasheet | Eudyna Devices

FEATURES - E High Output Power: P1d B=46.0d Bm(Typ.) - E High Gain: G1d B=13.0d B(Typ.) - E High PAE: ηadd=45%(Typ.) - E Broad Band: 2.11~2.17GHz - E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt Ga As FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25o C) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot T stg T ch 15 -5 100 -65 to +175 175 Unit V V W o C o C REMENDED OPERATING CONDITION (Case Temperature Tc=25o C) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch RG=5Ω RG=5Ω 12 <85 >-25 145 Unit V m A m A o ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Limit Item Symbol Condition Min. Typ. Max. Pinch-off Voltage Gate-Source Breakdown Voltage Unit V V d Bm d B A o Vp VGSO P1d B G1d B Idsr η add Rth VDS=5V,IDS=110m A IGS=-1.1m A V DD=12V f=2.17GHz IDS(DC)=1.5A Pin=35d Bm -0.1 -5.0 45.0 12.0 - -0.3 46.0 13.0 6.7 45.0 1.3 -0.5 8.7 1.5 Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Thermal Resistance % C/W CASE STYLE: IK Edition 1.2 September 2004 Class III 2000 V~ Note : Based on EIAJ ED-4701 C-111A(C=100p F, R=1.5k Ω) .. High Voltage - High Power Ga As FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN...