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FLL410IK-3C - L-Band High Power GaAs FET

General Description

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5

2.7 GHz band amplifiers.

This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

Key Features

  • High Output Power: Pout=46.0dBm(Typ. ) High Gain: GL=13.0dB(Typ. ) High PAE: ηadd=52%(Typ. ) Broad Band: 2.5~2.7GHz Hermetically Sealed Package.

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Datasheet Details

Part number FLL410IK-3C
Manufacturer Eudyna Devices
File Size 268.41 KB
Description L-Band High Power GaAs FET
Datasheet download datasheet FLL410IK-3C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=13.0dB(Typ.) High PAE: ηadd=52%(Typ.) Broad Band: 2.5~2.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FLL410IK-3C www.DataSheet4U.