FLL410IK-3C Datasheet | Eudyna Devices

FEATURES - High Output Power: Pout=46.0d Bm(Typ.) - High Gain: GL=13.0d B(Typ.) - High PAE: ηadd=52%(Typ.) - Broad Band: 2.5~2.7GHz - Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt Ga As FET that is designed for use in 2.5 - 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FLL410IK-3C .. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 100 -65 to +175 175 o Unit V V W C C o REMENNDED OPERATING CONDITION(Case Temperature Tc=25o C) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Symbol VDS IGF IGR Tch RG=5Ω RG=5Ω Condition Limit ≤12 ≤88 ≥-25 ≤145 Unit V m A m A o ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO POUT GL Idsr ηadd Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=110m A IGS=-1.1m A VDS=12V f=2.6 GHz IDS=3A Pin=35.0d Bm Channel to Case Min. -0.1 -5.0 45.0 12.0 - Limit Typ. 4.0 -0.3 46.0 13.0 5.9 52 1.3 Max. -0.5 7.6 1.5 Unit A V V d Bm d B A % o Output Power Linear Gain　- 1 Drain Current Power-added Efficiency Thermal Resistance C/W - １：GL is measured at Pin=22.0d Bm ESD Class Ⅲ 2000V　~ CASE STYLE: IK Note : Based on EIAJ ED-4701 C-111A(C=100p F, R=1.5kΩ) Edition 1.1 Oct 2003 L-Band High Power Ga As FET OUTPUT POWER vs. INPUT POWER .. OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER 48 46 Output Power [d Bm] 44 42 40 38 36 34 32 2.35 2.45 VDS=12V, IDS(DC)=3A Pin=36d Bm Pin=34d Bm VDS=12V, IDS(DC)=3A, f=2.6GHz 80 Power Added Efficiency[%] 70 60 50 40 30 20 10...