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FLL410IK-3C Datasheet L-band High Power Gaas Fet

Manufacturer: Eudyna Devices

Datasheet Details

Part number FLL410IK-3C
Manufacturer Eudyna Devices
File Size 268.41 KB
Description L-Band High Power GaAs FET
Datasheet FLL410IK-3C_EudynaDevices.pdf

FLL410IK-3C Overview

L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and...

FLL410IK-3C Key Features

  • 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS

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FLL410IK-3C Distributor