FLL400IP-3 Datasheet | Eudyna Devices

FEATURES - - - - - Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V .. DESCRIPTION The FLL400IP-3 is a 35 Watt Ga As FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power S-band amplifiers. This product is targeted to reduce the size and plexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 107 -65 to +175 +175 Unit V V W °C °C Eudyna remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 m A respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 d B G.C.P. Power Gain at 1 d B G.C.P. Drain Current Power-Added Efficiency Output Power at 1 d B G.C.P. Power Gain at 1 d B G.C.P. Thermal Resistance CASE STYLE: IP Note 1: The device shall be measured at a constant VGS condition. Symbol IDSS gm Vp VGSO P1d B G1d B IDSR ηadd P1d B G1d B Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 7.2A VDS = 5V, IDS = 720m A IGS = -720µA VDS = 12V f = 2.5 GHz IDS = 2A VDS = 10V f = 2.5 GHz IDS = 5A (Note 1)...