• Part: FLL400IP-2
  • Description: L-Band Medium & High Power GaAs FET
  • Manufacturer: Eudyna Devices
  • Size: 135.01 KB
Download FLL400IP-2 Datasheet PDF
Eudyna Devices
FLL400IP-2
FLL400IP-2 is L-Band Medium & High Power GaAs FET manufactured by Eudyna Devices.
FEATURES - - - - - Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V .. DESCRIPTION The FLL400IP-2 is a 35 Watt Ga As FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and plexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 107 -65 to +175 +175 Unit V V W °C °C - Solid State Base-Station Power Amplifier. - PCS/PCN munication Systems. Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 m A respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 d B G.C.P. Power Gain at 1 d B G.C.P. Drain Current Power-Added Efficiency Output Power at 1 d B G.C.P. Power Gain at 1 d B G.C.P. Thermal Resistance CASE STYLE: IP Symbol IDSS gm Vp VGSO P1d B G1d B IDSR ηadd P1d B G1d B Rth VDS = 12V f=1.96GHz IDS = 2A VDS = 10V f=1.96GHz IDS = 2A Channel to Case Conditions VDS = 5V, VGS=0V VDS = 5V, IDS=7.2A VDS = 5V, IDS=720m A IGS = -720µA Min. -1.0 -5 44.5 9.0 Limits Typ. Max. 12 6000 -2.0 45.5 10.0 6.0 44 44.5 10.0 1.0 16 -3.5 8.0 1.4 Unit A m S...