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Excelics Semiconductor

EIC5964-5 Datasheet Preview

EIC5964-5 Datasheet

Internally Matched Power FET

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EIC5964-5
5.90-6.40 GHz 5-Watt Internally-Matched Power FET
FEATURES
5.90 – 6.40 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at Po = 26.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC5964-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 5.90-6.40GHz
VDS = 10 V, IDSQ 1600mA
Gain at 1dB Compression
f = 5.90-6.40GHz
VDS = 10 V, IDSQ 1600mA
Gain Flatness
f = 5.90-6.40GHz
VDS = 10 V, IDSQ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1600mA
f = 5.90-6.40GHz
Id1dB
Drain Current at 1dB Compression f = 5.90-6.40GHz
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 6.40 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
36.5
9
-43
TYP
37.5
10
37
1600
-46
2900
-2.5
5.0
MAX
UNITS
dBm
dB
±0.6 dB
1900
%
mA
dBc
3500
-4.0
5.5
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2003




Excelics Semiconductor

EIC5964-5 Datasheet Preview

EIC5964-5 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
EIC5964-5
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
60 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
23 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1600mA
S11 and S22
Swp Max
6.6GHz
20
S21 andS12
-0.2
-0.4
3.0
4.0
5.0
10.0
S[1,1]
EIC5964-5
S[2,2]
EIC5964-5
Swp Min
5.7GHz
10
0
-10
-20
-30
5.7
DB(|S[2,1]|)
EIC5964-5
DB(|S[1,2]|)
EIC5964-5
6 6.3
Frequency (GHz)
6.6
FREQ
(GHz)
5.0
5.2
5.4
5.6
5.8
6.0
6.2
6.4
6.6
6.8
7.0
--- S11 ---
MAG
ANG
0.8762
-68.84
0.8635
-84.6
0.8302 -101.78
0.7786
-121
0.6819
-144.4
0.5026 -175.32
0.2156
131.27
0.2277
-19.28
0.5 -68.73
0.6636
-97.49
0.7514 -119.49
--- S21 ---
MAG
ANG
1.7994
80.39
2.007
59.65
2.2788
37.21
2.6401
12.91
3.1226
-14.08
3.6773
-46.63
4.0039
-85.29
3.7685 -126.36
3.096
-163.58
2.4237
165.14
1.8902
138.45
--- S12 ---
MAG
ANG
0.0328
29.57
0.038
8.76
0.0467
-14.33
0.0578
-41.76
0.0756
-70.41
0.0962 -102.08
0.1122 -140.56
0.1151
177.65
0.1006
142.35
0.0842
112.7
0.068
87.64
--- S22 ---
MAG
ANG
0.4953
-79.67
0.4698
-103
0.4494 -128.88
0.436
-157.76
0.4251
169.64
0.4017
129.34
0.3411
76.64
0.2831
9.5
0.2871
-55.38
0.3252
-99.88
0.3686 -130.68
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2003


Part Number EIC5964-5
Description Internally Matched Power FET
Maker Excelics Semiconductor
Total Page 4 Pages
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