EIC5964-4 Datasheet | Excelics Semiconductor

.. UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET Features - - - - - - - 5.90- 6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 10.0 d B Power Gain at 1d B pression 37% Power Added Efficiency -46 d Bc IM3 at PO = 25.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 9.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1100m A f = 5.90-6.40GHz Drain Current at 1d B pression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance 36.5 10.0 UNITS d Bm d B ±0.6 37 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o d B % 1300 m A d Bc m A V C/W VDS = 3 V, IDS = 20 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...