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EIC5964-4
UPDATED 08/21/2007
5.90-6.40 GHz 4-Watt Internally Matched Power FET
FEATURES
• • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH
Caution! ESD sensitive device. MIN
35.5 9.0
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 5.90-6.
EIC5964-4 Datasheet
