EIC5964-5 Datasheet | Excelics Semiconductor

.. 5.90-6.40 GHz 5-Watt Internally-Matched Power FET Features - - - - - - - - 5.90 - 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 d Bm Output Power at 1d B pression 10.0 d B Power Gain at 1d B pression 37% Power Added Efficiency -46 d Bc IM3 at Po = 26.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-5 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier Features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1600m A Gain at 1d B pression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1600m A Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1600m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1600m A f = 5.90-6.40GHz Drain Current at 1d B pression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 26.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40 GHz MIN 36.5 9 TYP 37.5 10 UNITS d Bm d B ±0.6 37 1600 -43 -46 2900 -2.5 5.0 3500 -4.0 5.5 o d B % 1900 m A d Bc m A V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 30 m A Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revised October...