EIC5972-12 Datasheet | Excelics Semiconductor

.. UPDATED 11/10/2006 5.90-7.20 GHz 12-Watt Internally Matched Power FET Excelics 945 .803 .079 MIN .079 MIN - - - - - - - - Features 5.90- 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 d Bm Output Power at 1d B pression 9.0 d B Power Gain at 1d B pression 36% Power Added Efficiency -46 d Bc IM3 at Pout = 30.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 YYWW .315 .685 .617 .004 .168 .055 .095 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200m A Gain Flatness f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200m A Drain Current at 1d B pression f = 5.90-7.20GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance o Caution! ESD sensitive device. MIN 40.5 8.0 41.5 9.0 UNITS d Bm d B ±0.8 36 3400 -43 -46 6000 -2.5 2.5 7500 -4.0 3.0 o d B % 3800 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25...