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EIC5964-8 - Internally Matched Power FET

Description

The EIC5964-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Features

  • 5.90.
  • 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC5964-8
Manufacturer Excelics Semiconductor
File Size 186.42 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC5964-8 Datasheet
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www.DataSheet4U.com EIC5964-8 5.90-6.40 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.
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