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EIC5964-10 - Internally Matched Power FET

Features

  • 5.90.
  • 6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC5964-10 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168.

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Datasheet Details

Part number EIC5964-10
Manufacturer Excelics Semiconductor
File Size 176.85 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC5964-10 Datasheet
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www.DataSheet4U.com EIC5964-10 UPDATED 08/21/2007 5.90-6.40 GHz 10-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC5964-10 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 39.5 9.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.90-6.
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