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Excelics Semiconductor

EIC6775-15 Datasheet Preview

EIC6775-15 Datasheet

Internally Matched Power FET

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ISSUED 10/08/2008
Preliminary
EIC6775-15
6.70-7.50 GHz 15-Watt Internally Matched Power FET
FEATURES
6.70– 7.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+42.0 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
31% Power Added Efficiency
100% Tested for DC, RF, and RTH
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC6775-15
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
VDS = 10 V, IDSQ 4500mA
Gain at 1dB Compression
f = 6.70-7.50GHz
f = 6.70-7.50GHz
VDS = 10 V, IDSQ 4500mA
Gain Flatness
f = 6.70-7.50GHz
VDS = 10 V, IDSQ 4500mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 4500mA
f = 6.70-7.50GHz
Drain Current at 1dB Compression
f = 6.70-7.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Note: 1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 85 mA
MIN
41.0
7.0
TYP
42.0
8.0
31
4600
8500
-2.5
2.0
MAX
±0.6
5200
11000
-4.0
2.5
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf
Forward Gate Current
189.9mA
Igsr
Reserve Gate Current
-10.6mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
41.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 60W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-3V
63.3mA
-31.7mA
@ 3dB Compression
175 oC
-65 to +175 oC
60W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2




Excelics Semiconductor

EIC6775-15 Datasheet Preview

EIC6775-15 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
ISSUED 10/08/2008
EIC6775-15
6.70-7.50 GHz 15-Watt Internally Matched Power FET
PACKAGES OUTLINE (Hermetic)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC6775-15
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Note: Dimensions in inches, Tolerance + .005 unless otherwise specified
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2


Part Number EIC6775-15
Description Internally Matched Power FET
Maker Excelics Semiconductor
Total Page 2 Pages
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