EIC6472-8 - Internally Matched Power FET

Description

The EIC6472-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Features

6.40.
7.20 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

Excelics Semiconductor

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Datasheet Details

Part number	EIC6472-8
Manufacturer	Excelics Semiconductor
File Size	185.72 KB
Description	Internally Matched Power FET
Datasheet	EIC6472-8 Datasheet
Additional preview pages of the EIC6472-8 datasheet.

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www.DataSheet4U.com EIC6472-8 6.40-7.20 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 6.40 – 7.20 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC6472-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 6.40-7.

Published: Aug 4, 2009 |