EIC6775-15 Datasheet | Excelics Semiconductor

.. Preliminary ISSUED 10/08/2008 6.70-7.50 GHz 15-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 Features - - - - - - 6.70- 7.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.0 d Bm Output Power at 1d B pression 7.5 d B Power Gain at 1d B pression 31% Power Added Efficiency 100% Tested for DC, RF, and RTH Excelics 0.945 0.803 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500m A Gain at 1d B pression f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500m A Gain Flatness f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 4500m A f = 6.70-7.50GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 41.0 7.0 42.0 8.0 UNITS d Bm d B ±0.6 31 4600 8500 -2.5 2.0 5200 11000 -4.0 2.5 o d B % m A m A V C/W f = 6.70-7.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 85 m A Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case...