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EIC6472-5 - Internally Matched Power FET

Features

  • 6.40.
  • 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC6472-5
Manufacturer Excelics Semiconductor
File Size 189.46 KB
Description Internally Matched Power FET
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www.DataSheet4U.com EIC6472-5 UPDATED 08/21/2007 6.40-7.20GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 6.40–7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600mA Gain Flatness f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1600mA f = 6.40-7.20GHz Drain Current at 1dB Compression f = 6.
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