EIC6472-5 Datasheet | Excelics Semiconductor

.. UPDATED 08/21/2007 6.40-7.20GHz 5-Watt Internally-Matched Power FET Features - - - - - - - 6.40- 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 d Bm Output Power at 1d B pression 9.5 d B Power Gain at 1d B pression 36% Power Added Efficiency -46 d Bc IM3 at PO = 26.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600m A Gain at 1d B pression f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600m A Gain Flatness f = 6.40-7.20GHz VDS = 10 V, IDSQ ≈ 1600m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1600m A f = 6.40-7.20GHz Drain Current at 1d B pression f = 6.40-7.20GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 26.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.20GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 36.5 8.5 TYP 37.5 9.5 ±0.6 36 1600 -43 -46 2900 -2.5 5.0 3500 -4.0 5.5 o UNITS d Bm d B d B % 1900 m A d Bc m A V C/W VDS = 3 V, IDS = 30 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...