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EMB17N03G Datasheet

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Excelliance MOS · EMB17N03G File Size : 181.20KB · 4 hits

Features and Benefits

a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/8/15 p.1 EMB17N03G ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero G.

EMB17N03G EMB17N03G EMB17N03G
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N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMB17N03G
EMB17A03G
EMB17A03H
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