Datasheet Details
| Part number | EMBA2A06HS |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 370.08 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMBA2A06HS-ExcellianceMOS.pdf |
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Overview: EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMBA2A06HS |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 370.08 KB |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMBA2A06HS-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 11 7.3 Pulsed Drain Current1 IDM 44 Avalanche Current IAS 5 Avalanche Energy L = 0.1mH EAS 1.25 Repetitive Avalanche Energy2 L = 0.05mH EAR 0.63 Power Dissipation TC = 25 °C TC = 100 °C PD 25 10 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNIT V A mJ W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL MAXIMUM 5 62.5 UNIT °C / W 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2019/4/22 Page.
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