EMBA5N10A Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
| Part number | EMBA5N10A |
|---|---|
| Datasheet | EMBA5N10A-ExcellianceMOS.pdf |
| File Size | 227.15 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMBA5N10AS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10CS | MOSFET |
| EMBA5N10G | MOSFET |
| EMBA5N10V | MOSFET |
| EMBA5A10G | MOSFET |
| EMBA5C10A | MOSFET |
| EMBA5C10G | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5P06J | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5P06P | MOSFET |
| EMBA0A10G | MOSFET |